338 citations · 928 across the 8 of their papers we have counts for
8 papers
Direct probing of phonon mode specific electron-phonon scatterings in two-dimensional semiconductor transition metal dichalcogenides: Symmetry and Berry phase
Duk Hyun Lee, Sang-Jun Choi, Hakseong Kim +2
Electron-phonon scatterings in solid-state systems are pivotal processes in determining many key physical quantities such as charge carrier mobilities and thermal conductivities. H…
Spectroscopic studies of atomic defects and bandgap renormalization in semiconducting monolayer transition metal dichalcogenides
Tae Young Jeong, Hakseong Kim, Sang-Jun Choi +5
Assessing atomic defect states and their ramifications on the electronic properties of two dimensional van der Waals semiconducting transition metal dichalcogenides (SC TMDs) is th…
Linear-response calculation of the effective Coulomb interaction between closed-shell localized electrons: Cu, Zn, and ZnO
Woo-Jin Lee, Yong-Sung Kim
A linear-response method to calculate the effective Coulomb interaction () between closed-shell localized electrons is suggested and applied to the closed-shell systems (Cu…
Electronic transport through ordered and disordered graphene grain boundaries
Péter Vancsó, Géza I. Márk, Philippe Lambin +4
The evolution of electronic wave packets (WPs) through grain boundaries (GBs) of various structures in graphene was investigated by the numerical solution of the time-dependent Sch…
Stability and dopability of native defects and group-V and -VII impurities in single-layer MoS2
Ji-Young Noh, Minkyu Park, Yong-Sung Kim +1
We investigate the native defects, the Mo substitutional impurities of the group-VB and -VIIB elements, and the S substitutional impurities of the group-VA and -VIIA elements in si…
Electronic states of disordered grain boundaries in graphene prepared by chemical vapor deposition
Péter Nemes Incze, Péter Vancsó, Zoltán Osváth +7
Perturbations of the two dimensional carbon lattice of graphene, such as grain boundaries, have significant influence on the charge transport and mechanical properties of this mate…
Instability of Amorphous Oxide Semiconductors via Carrier-Mediated Structural Transition between Disorder and Peroxide State
Ho-Hyun Nahm, Yong-Sung Kim, Dae Hwan Kim
The excited holes occupying the valence band tail states in amorphous oxide semiconductors are found to induce formation of meta-stable O peroxide defects. The valence ban…
Rich variety of defects in ZnO via an attractive interaction between O-vacancies and Zn-interstitials
Yong-Sung Kim, C. H. Park
As the concentration of intrinsic defects becomes sufficiently high in O-deficient ZnO, interactions between defects lead to a significant reduction in their formation energies. We…