Single-charge escape processes through a hybrid turnstile in a dissipative environment

Abstract

We have investigated the static, charge-trapping properties of a hybrid superconductor---normal metal electron turnstile embedded into a high-ohmic environment. The device includes a local Cr resistor on one side of the turnstile, and a superconducting trapping island on the other side. The electron hold times, t ~ 2-20s, in our two-junction circuit are comparable with those of typical multi-junction, N >= 4, normal-metal single-electron tunneling devices. A semi-phenomenological model of the environmental activation of tunneling is applied for the analysis of the switching statistics. The experimental results are promising for electrical metrology.

Submitted to New Journal of Physics 2010

References in corpus (2)

• Non-adiabadic charge pumping in a hybrid SET transistor
• Environmentally Activated Tunneling Events in a Hybrid Single-Electron Box

Cited by in corpus (8)

• Single-electron current sources: towards a refined definition of ampere
• Long hold times in a two-junction electron trap
• Towards the observation of phase locked Bloch oscillations in arrays of small Josephson junctions
• A hybrid superconductor-normal metal electron trap as a photon detector
• Characterising superconducting filters using residual microwave background
• Photon-activated electron hopping in a single-electron trap enhanced by Josephson radiation
• Two-junction superconductor-normal metal single-electron trap in a combined on-chip RC environment
• Suppression of back-tunnelling events in hybrid single-electron turnstiles by source-drain bias modulation