CMOS compatible dense arrays of Ge quantum dots on the Si(001) surface: Hut cluster nucleation, atomic structure, and array life cycle during UHV MBE growth

Abstract

We report a direct observation of Ge hut nucleation on Si(001) during UHV MBE. The study was carried out using a UHV instrument coupling MBE chamber and STM which enables the sample study on atomic level at any stage of treatment. Si wafers were deoxidized by annealing at 925C. Ge was deposited by electron beam evaporation; the coverage was varied from 3 to 14 Å; the wafer temperature was 360C. The nuclei of pyramids and wedges were observed on the (MxN) wetting layer (WL) patches and found to have different structures. The atomic models of nuclei of both hut species have been built as well as the models of the growing clusters. The growth of huts of each species has been demonstrated to follow generic scenarios. The formation of the second atomic layer of the wedge results in rearrangement of its first layer. Its ridge structure does not repeat the nucleus. The pyramid grows without phase transitions. The structure of its vertex copies the nucleus. Transitions between hut species are impossible. The wedges contain point defects in the upper corners of the triangular faces and have preferential growth directions along the ridges. The derived structure of the {105} facet turned out to follow the PD model. Further growth of hut arrays results in domination of wedges, the density of pyramids exponentially drops. The heights of wedges are limited; no limitation of pyramid heights is observed. The second generation of huts arises at coverages >10 Å; new huts occupy the whole WL.

A lecture at E-MRS 2010 Fall Meeting; Nanoscale Research Letters, 2011; http://www.nanoscalereslett.com/content/6/1/345

References in corpus (4)

• CMOS compatible dense arrays of Ge quantum dots on the Si(001) surface: Hut cluster nucleation, atomic structure, and array life cycle during UHV MBE growth
• Phase transition on the Si(001) clean surface prepared in UHV MBE chamber: A study by high resolution STM and in situ RHEED
• Phase transition between (2 x 1) and c(8 x 8) reconstructions observed on the Si(001) surface around 600C
• The Role of Interdiffusion and Spatial Confinement in the Formation of Resonant Raman Spectra of Ge/Si(100) Heterostructures with Quantum-Dot Arrays

Cited by in corpus (5)

• CMOS compatible dense arrays of Ge quantum dots on the Si(001) surface: Hut cluster nucleation, atomic structure, and array life cycle during UHV MBE growth
• Phase transition on the Si(001) clean surface prepared in UHV MBE chamber: A study by high resolution STM and in situ RHEED
• An initial phase of Ge hut array formation at low temperature on Si(001)
• Ge/Si(001) heterostructures with dense arrays of Ge quantum dots: morphology, defects, photo-emf spectra and terahertz conductivity
• Absorption of Terahertz Radiation in Ge/Si(001) Heterostructures with Quantum Dots