activity
20092013
most citedClassification of Ge hut clusters in the arrays formed by molecular beam epitaxy at low temperatures on the Si(001) surface

5 citations · 15 across the 7 of their papers we have counts for

collaborators

7 papers

cond-mat.mtrl-sci2013

Investigation of quantum-dimensional structure parameters by X-ray optical, scanning tunneling and transmission electron microscopy

A. G. Touryanski, V. M. Senkov, S. S. Gizha +7

Application of the two-wavelength X-ray reflectometry to exploration of Ge/Si(001) hereostructures with dense chains of stacked Ge quantum dots is presented

cond-mat.mtrl-sci2012★ 1 cited

Ge/Si(001) Heterostructures with Quantum Dots: Formation, Defects, Photo-Electromotive Force and Terahertz Conductivity

V. A. Yuryev, L. V. Arapkina, M. S. Storozhevykh +8

Issues of Ge hut cluster nucleation and growth at low temperatures on the Ge/Si(001) wetting layer are discussed on the basis of explorations performed by high resolution STM and i…

cond-mat.mtrl-sci2012★ 3 cited

Application of hydrogenation to low-temperature cleaning of the Si(001) surface in the processes of molecular-beam epitaxy: Investigation by STM, RHEED and HRTEM

L. V. Arapkina, L. A. Krylova, K. V. Chizh +3

Structural properties of the clean Si(001) surface obtained as a result of low-temperature (470--650C) pre-growth annealings of silicon wafers in a molecular-beam epitaxy chamber h…

cond-mat.mtrl-sci2010

Terahertz conductivity of Si and of Ge/Si(001) heterostructures with quantum dots

E. S. Zhukova, B. P. Gorshunov, A. S. Prokhorov +7

With an MBE technique, a Si/Ge heterostructures are prepared containing layers of nanostructured Ge with quantum dots of size of several nanometers. The effective conductivity of t…

cond-mat.mes-hall2009★ 4 cited

Effect of interdiffusion and quantum confinement on Raman spectra of the Ge/Si(100) heterostructures with quantum dots

I. V. Kucherenko, V. S. Vinogradov, N. N. Melnik +4

We used Raman scattering for study the phonon modes of self-organized Ge/Si quantum dots, grown by a molecular-beam epitaxy method. It is revealed, that Ge-Ge and Si-Ge vibrational…

cond-mat.mes-hall2009★ 2 cited

Capacitance investigation of Ge nanoclusters on a silicon (001) surface grown by MBE at low temperatures

O. V. Feklisova, E. B. Yakimov, L. V. Arapkina +4

Electrical properties of multilayer arrays of germanium nanoclusters grown on the silicon (001) surface at low temperature have been studied. A correlation between the quantum dot…