Valley symmetry breaking and gap tuning in graphene by spin doping
arXiv:1007.0367 · doi:10.1088/1367-2630/13/3/035023
Abstract
We study graphene with an adsorbed spin texture, where the localized spins create a periodic magnetic flux. The latter produces gaps in the graphene spectrum and breaks the valley symmetry. The resulting effective electronic model, which is similar to Haldane's periodic flux model, allows us to tune the gap of one valley independently from that of the other valley. This leads to the formation of two Hall plateaux and a quantum Hall transition. We discuss the density of states, optical longitudinal and Hall conductivities for nonzero frequencies and nonzero temperatures. A robust logarithmic singularity appears in the Hall conductivity when the frequency of the external field agrees with the width of the gap.
14 pages, 7 figures
References in corpus (20)
- Electric Field Effect in Atomically Thin Carbon Films
- The electronic properties of graphene
- The structure of suspended graphene sheets
- Control of graphene's properties by reversible hydrogenation
- Substrate-induced band gap opening in epitaxial graphene
- Biased bilayer graphene: semiconductor with a gap tunable by electric field effect
- Unconventional quantum Hall effect and Berry's phase of 2pi in bilayer graphene
- Gate-induced insulating state in bilayer graphene devices
- Valley Dependent Optoelectronics from Inversion Symmetry Breaking
- Ab Initio Theory of Gate Induced Gaps in Graphene Bilayers
- Atomic Hole Doping of Graphene
- Determination of the electronic structure of bilayer graphene from infrared spectroscopy results
- Metal to insulator transition in epitaxial graphene induced by molecular doping
- On the minimal conductivity of graphene
- Sum Rules for the Optical and Hall Conductivity in Graphene
- Robust Transport Properties in Graphene
- Berry phase mediated topological thermoelectric transport in gapped single and bilayer graphene
- Random gap model for graphene and graphene bilayers
- Diffusion in the random gap model of mono- and bilayer graphene
- Quantized Transport in Two-Dimensional Spin-Ordered Structures