Mechanism for current saturation and energy dissipation in graphene transistors
arXiv:1005.1351 · doi:10.1103/PhysRevLett.104.236601
Abstract
From a combination of careful and detailed theoretical and experimental studies, we demonstrate that the Boltzmann theory including all scattering mechanisms gives an excellent account, with no adjustable parameters, of high electric field transport in single as well as double-oxide graphene transistors. We further show unambiguously that scattering from the substrate and superstrate surface optical (SO) phonons governs the high field transport and heat dissipation over a wide range of experimentally relevant parameters. Models that neglect SO phonons altogether or treat them in a simple phenomenological manner are inadequate. We outline possible strategies for achieving higher current and complete saturation in graphene devices.
revtex, 5 pages, 3 figures, to appear in Phys. Rev. Lett.
References in corpus (11)
- The electronic properties of graphene
- Intrinsic and Extrinsic Performance Limits of Graphene Devices on SiO2
- Charged Impurity Scattering in Graphene
- Carrier transport in 2D graphene layers
- A self-consistent theory for graphene transport
- Acoustic phonon scattering limited carrier mobility in 2D extrinsic graphene
- Substrate limited electron dynamics in graphene
- Electron Transport and Hot Phonons in Carbon Nanotubes
- High-Mobility Few-Layer Graphene Field Effect Transistors Fabricated on Epitaxial Ferroelectric Gate Oxides
- High-Mobility Few-Layer Graphene Field Effect Transistors Fabricated on Epitaxial Ferroelectric Gate Oxides (Supplementary Information)
- Diffusive Charge Transport in Graphene on SiO2
Cited by in corpus (7)
- Electron-Phonon Interactions and the Intrinsic Electrical Resistivity of Graphene
- Cooling of photoexcited carriers in graphene by internal and substrate phonons
- Effects of optical and surface polar phonons on the optical conductivity of doped graphene
- Influence of the substrate on the diffusion coefficient and the momentum relaxation in graphene: the role of surface polar phonons
- Integrating Functional Oxides with Graphene
- Theoretical analysis of high-field transport in graphene on a substrate
- THz response of nonequilibrium electrons of highly doped graphene on a polar substrate