Strain, magnetic anisotropy, and anisotropic magnetoresistance in (Ga,Mn)As on high-index substrates: application to (113)A-oriented layers

Abstract

Based on a detailed theoretical examination of the lattice distortion in high-index epilayers in terms of continuum mechanics, expressions are deduced that allow the calculation and experimental determination of the strain tensor for (hhl)-oriented (Ga,Mn)As layers. Analytical expressions are derived for the strain-dependent free-energy density and for the resistivity tensor for monoclinic and orthorhombic crystal symmetry, phenomenologically describing the magnetic anisotropy (MA) and anisotropic magnetoresistance (AMR) by appropriate anisotropy and resistivity parameters, respectively. Applying the results to (113)A orientation with monoclinic crystal symmetry, the expressions are used to determine the strain tensor and the shear angle of a series of (113)A-oriented (Ga,Mn)As layers by high-resolution x-ray diffraction and to probe the MA and AMR at 4.2 K by means of angle-dependent magnetotransport. Whereas the transverse resistivity parameters are nearly unaffected by the magnetic field, the parameters describing the longitudinal resistivity are strongly field dependent.

12 pages, 10 figures

References in corpus (12)

• Theory of ferromagnetic (III,Mn)V semiconductors
• Curie point singularity in the temperature derivative of resistivity in (Ga,Mn)As
• Anisotropic Magnetoresistance components in (Ga,Mn)As
• GaMnAs-based hybrid multiferroic memory device
• Voltage control of magnetocrystalline anisotropy in ferromagnetic - semiconductor/piezoelectric hybrid structures
• Control of magnetic anisotropy in (Ga,Mn)As by lithography-induced strain relaxation
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• Magneto crystalline anisotropies in (Ga,Mn)As: A systematic theoretical study and comparison with experiment
• Piezo-control of magnetic anisotropy in GaMnAs: Reversible manipulation of magnetization orientation and irreversible magnetization switching
• Lithographically and electrically controlled strain effects on anisotropic magnetoresistance in (Ga,Mn)As
• Advanced resistivity model for arbitrary magnetization orientation applied to a series of compressive- to tensile-strained (Ga,Mn)As layers
• Scaling relation of the anomalous Hall effect in (Ga,Mn)As

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• Surface Acoustic Wave-Driven Ferromagnetic Resonance in Nickel Thin Films: Theory and Experiment
• Selective spin wave excitation in ferromagnetic (Ga,Mn)As layers by picosecond strain pulses
• Magnetization precession induced by quasi-transverse picosecond strain pulses in (311) ferromagnetic (Ga,Mn)As
• Theory of magnetization precession induced by a picosecond strain pulse in ferromagnetic semiconductor (Ga,Mn)As
• Angle-Dependent Spin-Wave Resonance Spectroscopy of (Ga,Mn)As Films
• Magnetic anisotropies of quantum dots