Microtraps for neutral atoms using superconducting structures in the critical state
arXiv:0911.4095 · doi:10.1103/PhysRevA.80.061604
Abstract
Recently demonstrated superconducting atom-chips provide a platform for trapping atoms and coupling them to solid-state quantum systems. Controlling these devices requires a full understanding of the supercurrent distribution in the trapping structures. For type-II superconductors, this distribution is hysteretic in the critical state due to the partial penetration of the magnetic field in the thin superconducting film through pinned vortices. We report here an experimental observation of this memory effect. Our results are in good agreement with the redictions of the Bean model of the critical state without adjustable parameters. The memory effect allows to write and store permanent currents in micron-sized superconducting structures and paves the way towards new types of engineered trapping potentials.
accepted in Phys. Rev. A
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- Memory Effects in Spontaneous Emission Processes
- 3D modeling of magnetic atom traps on type-II superconductor chips
- Current-induced magnetization hysteresis defines atom trapping in a superconducting atomchip
- Single vortex fluctuations in a superconducting chip as generating dephasing and spin flips in cold atom traps
- Optimal thickness of rectangular superconducting microtraps for cold atomic gases
- The design of an experimental platform for hybridization of atomic and superconducting quantum systems
- Trapping neutral atoms in the field of a vortex pinned by a superconducting nano-disc