Raman spectroscopy of wurtzite and zinc-blende GaAs nanowires: polarization dependence, selection rules and strain effects
arXiv:0910.5266 · doi:10.1103/PhysRevB.80.245324
Abstract
Polarization dependent Raman scattering experiments realized on single GaAs nanowires with different percentages of zinc-blende and wurtzite structure are presented. The selection rules for the special case of nanowires are found and discussed. In the case of zinc-blende, the transversal optical mode E1(TO) at 267 cm-1 exhibits the highest intensity when the incident and analyzed polarization are parallel to the nanowire axis. This is a consequence of the nanowire geometry and dielectric mismatch with the environment, and in quite good agreement with the Raman selection rules. We also find a consistent splitting of 1 cm-1 of the E1(TO). The transversal optical mode related to the wurtzite structure, E2H, is measured between 254 and 256 cm-1, depending on the wurtzite content. The azymutal dependence of E2H indicates that the mode is excited with the highest efficiency when the incident and analyzed polarization are perpendicular to the nanowire axis, in agreement with the selection rules. The presence of strain between wurtzite and zinc-blende is analyzed by the relative shift of the E1(TO) and E2H modes. Finally, the influence of the surface roughness in the intensity of the longitudinal optical mode on {110} facets is presented.
arXiv comment28 pages, 12 figures. to be published in Phys. Rev. B
References in corpus (8)
- Why does wurtzite form in nanowires of III-V zinc-blende semiconductors?
- Twinning superlattices in indium phosphide nanowires
- Structural and optical properties of high quality zinc-blende/wurtzite GaAs hetero-nanowires
- Tunable Supercurrent Through Semiconductor Nanowires
- Single quantum dot nanowire LEDs
- Double quantum dot with integrated charge sensor based on Ge/Si heterostructure nanowires
- Size dependence of the bulk and surface phonon modes of gallium arsenide nanowires as measured by Raman Spectroscopy
- Confined optical phonon modes in polar tetrapod nanocrystals detected by resonant inelastic light scattering
Cited by in corpus (16)
- Structural and optical properties of high quality zinc-blende/wurtzite GaAs hetero-nanowires
- Direct correlation of crystal structure and optical properties in wurtzite/zinc-blende GaAs nanowire heterostructures
- Luminescence of GaAs nanowires consisting of wurtzite and zincblende segments
- Up to 40 % reduction of the GaAs band gap energy via strain engineering in core/shell nanowires
- Complete determination of crystallographic orientation of ReX2 (X=S, Se) by polarized Raman spectroscopy
- Determination of the bandgap and split-off band of wurtzite GaAs
- Group-III assisted catalyst-free growth of InGaAs nanowires and the formation of quantum dots
- Optical phonon modes of wurtzite InP
- All-wurtzite (In,Ga)As-(Ga,Mn)As core-shell nanowires grown by molecular beam epitaxy
- Effect of the GaAsP shell on optical properties of self-catalyzed GaAs nanowires grown on silicon
- Electronic Band Structure of Wurtzite GaP Nanowires via Resonance Raman Spectroscopy
- Thermal conductivity for III-V and II-VI semiconductor wurtzite and zinc-blende polytypes: the role of anharmonicity and phase space
- Phonon confinement and plasmon-phonon interaction in nanowire based quantum wells
- Observing visible-range photoluminescence in GaAs nanowires modified by laser irradiation
- Structural and optical properties of self-catalytic GaAs:Mn nanowires grown by molecular beam epitaxy on silicon substrates
- Modelling the electronic properties of GaAs polytype nanostructures: impact of strain on the conduction band character