Size dependence of the bulk and surface phonon modes of gallium arsenide nanowires as measured by Raman Spectroscopy

Abstract

Gallium arsenide nanowires were synthesized by gallium-assisted molecular beam epitaxy. By varying the growth time, nanowires with diameters ranging from 30 to 160 nm were obtained. Raman spectra of the nanowires ensembles were measured. The small line width of the optical phonon modes agree with an excellent crystalline quality. A surface phonon mode was also revealed, as a shoulder at lower frequencies of the longitudinal optical mode. In agreement with the theory, the surface mode shifts to lower wave numbers when the diameter of the nanowires is decreased or the environment dielectric constant increased.

arXiv comment4 pages, 3 figures

References in corpus (3)

• One-Dimensional Hole Gas in Germanium/Silicon Nanowire Heterostructures
• Single-electron tunneling in InP nanowires
• Confined optical phonon modes in polar tetrapod nanocrystals detected by resonant inelastic light scattering

Cited by in corpus (4)

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• Raman spectroscopy of wurtzite and zinc-blende GaAs nanowires: polarization dependence, selection rules and strain effects
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• Ultrafast Optical Generation of Coherent Bright and Dark Surface Phonon Polaritons in Nanowires