264 citations · 632 across the 5 of their papers we have counts for
5 papers
Field effect enhancement in buffered quantum nanowire networks
Filip Krizek, Joachim E. Sestoft, Pavel Aseev +15
III-V semiconductor nanowires have shown great potential in various quantum transport experiments. However, realizing a scalable high-quality nanowire-based platform that could lea…
Direct correlation of crystal structure and optical properties in wurtzite/zinc-blende GaAs nanowire heterostructures
Martin Heiß, Sonia Conesa-Boj, Jun Ren +11
A novel method for the direct correlation at the nanoscale of structural and optical properties of single GaAs nanowires is reported. Nanowires consisting of 100% wurtzite and nano…
Group-III assisted catalyst-free growth of InGaAs nanowires and the formation of quantum dots
Martin Heiß, Bernt Ketterer, Emanuele Uccelli +3
Growth of GaAs and InGaAs nanowires by the group-III assisted Molecular Beam Epitaxy growth method is studied in dependence of growth temperature, with the objective of maximizing…
Raman spectroscopy of wurtzite and zinc-blende GaAs nanowires: polarization dependence, selection rules and strain effects
I. Zardo, S. Conesa-Boj, F. Peiro +5
Polarization dependent Raman scattering experiments realized on single GaAs nanowires with different percentages of zinc-blende and wurtzite structure are presented. The selection…
A new method to epitaxially grow long-range ordered self-assembled InAs quantum dots on (110) GaAs
J. Bauer, D. Schuh, E. Uccelli +5
We report on a new approach for positioning of self-assembled InAs quantum dots on (110) GaAs with nanometer precision. By combining self-assembly of quantum dots with molecular be…