Influence of disorder on incoherent transport near the Mott transition

Abstract

We calculate the optical and DC conductivity for half-filled disordered Hubbard model near the Mott metal-insulator transition. As in the clean case, large metallic resistivity is driven by a strong inelastic scattering, and Drude-like peak in the optical conductivity persists even at temperatures when the resistivity is well beyond the semiclassical Mott-Ioffe-Regel limit. Local random potential does not introduce new charge carriers, but it induces effective local carrier doping and broadens the bandwidth. This makes the system more metallic, in agreement with the recent experiments on X-ray irradiated charge-transfer salts.

6 pages, Figure 2 added

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• Anderson localization effects near the Mott metal-insulator transition
• Phase diagram, energy scales and nonlocal correlations in the Anderson lattice model
• Systematic Quantum Cluster Typical Medium Method For the Study of Localization in Strongly Disordered Electronic Systems
• Quantum critical scaling for finite temperature Mott-like metal-insulator crossover in a few layered-MoS${}_2$
• Typical-Medium Theory of Mott-Anderson Localization
• Effects of Disorder on the Pressure-Induced Mott Transition in $\kappa$-BEDT-TTF)${}_2$Cu[N(CN)${}_2$]Cl
• Ingredients for Generalized Models of $\kappa$-Phase Organic Charge-Transfer Salts: A Review
• How to recognize the universal aspects of Mott criticality?
• Realization of a "Two Relaxation Rates" in the Hubbard-Falicov-Kimball Model
• Locally self-consistent embedding approach for disordered electronic systems
• Can disorder act as a chemical pressure? An optical study of the Hubbard model