X-ray Irradiation-induced Carrier Doping Effects in Organic Dimer-Mott Insulators
arXiv:0710.3005 · doi:10.1143/JPSJ.76.123701
Abstract
We report X-ray irradiation-induced carrier doping effects on the electrical conductivity in the organic dimer-Mott insulators -(ET) with Cu[N(CN)]Cl and Cu(CN). For -(ET)Cu[N(CN)]Cl, we have observed a large decrease of the resistivity by 40 % with the irradiation at 300 K and the metal-like temperature dependence down to about 50 K. The irradiation-induced defects expected at the donor molecule sites might cause a local imbalance of the charge transfer in the crystal. Such molecular defects result in the effective doping of carriers into the half-filled dimer-Mott insulators.
4 pages, 3 figures
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Cited by in corpus (9)
- Electrodynamics of Correlated Electron Materials
- Anisotropic charge dynamics in the quantum spin-liquid candidate -(BEDT-TTF)Cu(CN)
- Molecular Quantum Materials: Electronic Phases and Charge Dynamics in Two-Dimensional Organic Solids
- Electron localization near Mott transition in organic superconductor -(BEDT-TTF)Cu[N(CN)Br
- Optical probe of carrier doping by X-ray irradiation in organic dimer Mott insulator -(BEDT-TTF)Cu[N(CN)Cl
- Influence of disorder on incoherent transport near the Mott transition
- Suppression of superconductivity by non-magnetic disorder in organic superconductor -(BEDT-TTF)Cu(NCS)
- Theory of Electron Transport near Anderson-Mott Transitions
- Metallic Pattern Fabrication in Organic Mott Insulating Crystal by Local X-Ray Irradiation