Metallic Pattern Fabrication in Organic Mott Insulating Crystal by Local X-Ray Irradiation

Abstract

We have fabricated a metallic structure in an organic Mott insulator $\kappa$-(BEDT-TTF)${}_2$Cu[N(CN)${}_2$]Cl. The periodic metallic domains of approximately 90$\times$90 $\mu$m${}^2$ obtained by X-ray irradiation through a molybdenum mesh mask are visualized by scanning microregion infrared reflectance spectroscopy technique. No deterioration by irradiation is found in a range of nanometer to micrometer scales. We demonstrate that the present processing method is applicable for the fabrication of molecular electronic devices.

3 pages, submitted to APEX

References in corpus (5)

• Real space imaging of the metal - insulator phase separation in the band width controlled organic Mott system $\kappa$-(BEDT-TTF)${}_2$Cu[N(CN)${}_2$]Br
• Electronic correlation in the infrared optical properties of the quasi two dimensional $\kappa$-type BEDT-TTF dimer system
• Optical probe of carrier doping by X-ray irradiation in organic dimer Mott insulator $\kappa$-(BEDT-TTF)${}_2$Cu[N(CN)${}_2]$Cl
• X-ray Irradiation-induced Carrier Doping Effects in Organic Dimer-Mott Insulators
• Phase separation in the vicinity of the surface of $\kappa$-(BEDT-TTF)${}_2$Cu[N(CN)${}_2$]Br by fast cooling