Effects of disorder on the non-zero temperature Mott Transition

Abstract

The physics of the metal-insulator coexistence region near the non-zero temperature Mott transition is investigated in presence of weak disorder. We demonstrate that disorder reduces the temperature extent and the general size of the coexistence region, consistent with recent experiments on several Mott systems. We also discuss the qualitative scenario for the disorder-modified Mott transition, and present simple scaling arguments that reveal the similarities to, and the differences from, the clean limit.

7 pages, 7 figures

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• Molecular Quantum Materials: Electronic Phases and Charge Dynamics in Two-Dimensional Organic Solids
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• Electronic Griffiths phase of the d=2 Mott transition
• Emergent Bloch Excitations in Mott Matter
• Influence of disorder on incoherent transport near the Mott transition
• Self-doping instability of the Wigner-Mott insulator
• Anderson localization effects near the Mott metal-insulator transition
• Ground-state properties of the disordered Hubbard model in two dimensions
• Determinant Quantum Monte Carlo Study of the Screening of the One Body Potential near a Metal-Insulator Transition
• The two-dimensional disordered Mott metal-insulator transition
• Effects of Disorder on the Pressure-Induced Mott Transition in $\kappa$-BEDT-TTF)${}_2$Cu[N(CN)${}_2$]Cl
• A local theory for Mott-Anderson localization
• Adatoms and Anderson localization in graphene
• Mott Quantum Criticality in the Anisotropic 2D Hubbard Model
• Doping a Wigner-Mott insulator: Exotic charge orders in transition-metal dichalcogenide moiré heterobilayers
• Gating-Induced Mott Transition in NiS${}_2$
• Unusually thick metal-insulator domain walls around the Mott point
• Universal Mott quantum criticality in a modified periodic Anderson model