Anderson localization effects near the Mott metal-insulator transition

Abstract

The interplay between Mott and Anderson routes to localization in disordered interacting systems gives rise to different transitions and transport regimes. Here, we investigate the phase diagram at finite temperatures using dynamical mean field theory combined with typical medium theory, which is an effective theory of the Mott-Anderson metal-insulator transition. We mainly focus on the properties of the coexistence region associated with the Mott phase transition. For weak disorder, the coexistence region is found to be similar as in the clean case. However, as we increase disorder Anderson localization effects are responsible for shrinking the coexistence region and at sufficiently strong disorder (approximately equal to twice the bare bandwidth) it drastically narrows, the critical temperature abruptly goes to zero, and we observe a phase transition in the absence of a coexistence of the metallic and insulating phases. In this regime, the effects of interaction and disorder are found to be of comparable importance for charge localization.

minor changes, 8 pages, 9 figures

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• Fingerprints of spin-orbital polarons and of their disorder in the photoemission spectra of doped Mott insulators with orbital degeneracy
• Ingredients for Generalized Models of $\kappa$-Phase Organic Charge-Transfer Salts: A Review
• Local integrals of motion in the two-site Anderson-Hubbard model
• Mott Quantum Criticality in the Anisotropic 2D Hubbard Model
• Ab initio typical medium theory of substitutional disorder
• Anderson localization effects on doped Hubbard model
• Non-local corrections to the typical medium theory of Anderson localization
• Transport and spectroscopic signatures of a disorder-stabilized metal in two-dimensional frustrated Mott insulators
• Coherent cellular dynamical mean-field theory: a real-space quantum embedding approach to disorder in strongly correlated electron systems
• Suppression of the Mott insulating phase in the particle-hole asymmetric Hubbard model
• Probing Electron Localization and Delocalization in the Selective Long-Range Tight-Binding Model