Photocurrent and Photoconductance Properties of a GaAs Nanowire

Abstract

We report on photocurrent and photoconductance processes in a freely suspended p-doped single GaAs nanowire. The nanowires are grown by molecular beam epitaxy (MBE), and they are electrically contacted by a focused ion beam (FIB) deposition technique. The observed photocurrent is generated at the Schottky contacts between the nanowire and metal source-drain electrodes, while the observed photoconductance signal can be explained by a photogating effect induced by optically generated charge carriers located at the surface of the nanowire. Both optoelectronic effects are sensitive to the polarization of the exciting laser field, enabling polarization dependent photodetectors.

References in corpus (5)

• Single quantum dot nanowire LEDs
• Single-electron tunneling in InP nanowires
• Micropatterned Electrostatic Traps for Indirect Excitons in Coupled GaAs Quantum Wells
• Dynamic photoconductive gain effect in shallow-etched AlGaAs/GaAs quantum wires
• Optically induced transport properties of freely suspended semiconductor submicron channels

Cited by in corpus (8)

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• Nanowire photodetectors based on wurtzite semiconductor heterostructures
• Photocurrents in a Single InAs Nanowire/ Silicon Heterojunction
• Photocurrent characteristics of individual GeSe2 nanobelt with Schottky effects
• Optical control of internal electric fields in band-gap graded InGaN nanowires
• Radial Stark effect in (In,Ga)N nanowires
• Effective separation of photogenerated electron-hole pairs by radial field facilitates ultrahigh photoresponse in single semiconductor nanowire photodetectors
• Photoconductance of a submicron oxidized line in surface conductive single crystalline diamond