Magnetic circular dichroism in GaMnAs: (no) evidence for an impurity band
arXiv:0904.2864 · doi:10.1103/PhysRevB.80.161201
Abstract
Magneto-optical properties of the ferromagnetic semiconductor GaMnAs are studied in a material specific multi-band tight-binding approach. Two realistic models are compared: one has no impurity band while the other shows an impurity band for low Mn concentrations. The calculated magnetic circular dichroism (MCD) is positive for both models proving that, unlike previously asserted, the observed positive MCD signal is inconclusive as to the presence or absence of an impurity band in GaMnAs. The positive MCD is due to the antiferromagnetic p-d coupling and the transitions into the conduction band.
4 pages, 3 figues
References in corpus (8)
- Theory of ferromagnetic (III,Mn)V semiconductors
- On the character of states near the Fermi level in (Ga,Mn)As: impurity to valence band crossover
- Origin and control of ferromagnetism in dilute magnetic semiconductors and oxides
- Origin of the anomalous magnetic circular dichroism spectral shape in ferromagnetic (Ga,Mn)As: Impurity bands inside the band gap
- Multiband tight-binding model of local magnetism in GaMnAs
- Optical Properties of III-Mn-V Ferromagnetic Semiconductors
- Interplay between carrier localization and magnetism in diluted magnetic and ferromagnetic semiconductors
- Magnetic circular dichroism from the impurity band in III-V diluted magnetic semiconductors