Intrinsic Coupling between Current and Domain Wall Motion in (Ga,Mn)As

Abstract

We consider current-induced domain wall motion and, the reciprocal process, moving domain wall-induced current. The associated Onsager coefficients are expressed in terms of scattering matrices. Uncommonly, in (Ga,Mn)As, the effective Gilbert damping coefficient ${\alpha }_w$ and the effective out-of-plane spin transfer torque parameter ${\beta }_w$ are dominated by spin-orbit interaction in combination with scattering off the domain wall, and not scattering off extrinsic impurities. Numerical calculations give ${\alpha }_w\sim 0.01$ and ${\beta }_w\sim 1$ in dirty (Ga,Mn)As. The extraordinary large ${\beta }_w$ parameter allows experimental detection of current or voltage induced by domain wall motion in (Ga,Mn)As.

Final version accepted by Physical Review Letters

References in corpus (10)

• Spin Transfer Torques
• Theory of ferromagnetic (III,Mn)V semiconductors
• Electron Transport Driven by Nonequilibrium Magnetic Textures
• Theory of current-driven magnetization dynamics in inhomogeneous ferromagnets
• Spin pumping by a field-driven domain wall
• Effects of non-adiabaticity on the voltage generated by a moving domain wall
• Field-Driven Domain-Wall Dynamics in GaMnAs Films with Perpendicular Anisotropy
• Charge current driven by spin dynamics in disordered Rashba spin-orbit system
• Influence of band structure effects on domain-wall resistance in diluted ferromagnetic semiconductors
• External Control of a Metal-Insulator Transition in GaMnAs Wires