Domain wall motion in epitaxial Pb(Zr,Ti)O3 capacitors investigated by modified piezoresponse force microscopy

Abstract

We investigated the time-dependent domain wall motion of epitaxial PbZr0.2Ti0.8O3 capacitors 100 nm-thick using modified piezoresponse force microscopy (PFM). We obtained successive domain evolution images reliably by combining the PFM with switching current measurements. We observed that domain wall speed (v) decreases with increases in domain size. We also observed that the average value of v, obtained under applied electric field (Eapp),showed creep behavior: i.e. <v> ~ exp(-E0/Eapp)^$\mu$ with an exponent $\mu$ of 0.9 $\pm$ 0.1 and an activation field E0 of about 700 kV/cm.

11 pages, 4 figures

References in corpus (4)

• Suppressed dependence of polarization on epitaxial strain in highly polar ferroelectrics
• Observation of inhomogeneous domain nucleation in epitaxial Pb(Zr,Ti)O3 capacitors
• Polarization Switching Dynamics Governed by Thermodynamic Nucleation Process in Ultrathin Ferroelectric Films
• Probing the role of single defects on the thermodynamics of electric-field induced phase transitions

Cited by in corpus (2)

• Nonlinear Dynamics of Domain Wall Propagation in Epitaxial Ferroelectric Thin Films
• Four switching categories for thin-film and bulk ferroelectrics