activity
20052017
most citedObservation of inhomogeneous domain nucleation in epitaxial Pb(Zr,Ti)O3 capacitors

117 citations · 326 across the 6 of their papers we have counts for

collaborators

6 papers

cond-mat.mes-hall2017★ 24 cited

A New Method for Characterizing Bulk and Surface Conductivities of Three-Dimensional Topological Insulators: Inverted Resistance Measurements

Y. S. Eo, K. Sun, Ç. Kurdak +2

We introduce a new resistance measurement method that is useful in characterizing materials with both surface and bulk conduction, such as three-dimensional topological insulators.…

cond-mat.mtrl-sci2010★ 28 cited

Control of defect-mediated tunneling barrier heights in ultrathin MgO films

D. J. Kim, W. S. Choi, F. Schleicher +9

The impact of oxygen vacancies on local tunneling properties across rf-sputtered MgO thin films was investigated by optical absorption spectroscopy and conducting atomic force micr…

cond-mat.mtrl-sci2008★ 68 cited

Domain wall motion in epitaxial Pb(Zr,Ti)O3 capacitors investigated by modified piezoresponse force microscopy

S. M. Yang, J. Y. Jo, D. J. Kim +5

We investigated the time-dependent domain wall motion of epitaxial PbZr0.2Ti0.8O3 capacitors 100 nm-thick using modified piezoresponse force microscopy (PFM). We obtained successiv…

cond-mat.mtrl-sci2007★ 24 cited

Composition-dependent polarization switching behaviors of (111)-preferred polycrystalline Pb(Zr_{x}Ti_{1-x})O_{3} thin films

J. Y. Jo, S. M. Yang, H. S. Han +8

We investigated the time-dependent polarization switching behaviors of (111)-preferred polycrystalline Pb(ZrxTi1-x)O3 thin films with various Zr concentrations. We could explain al…

cond-mat.mtrl-sci2007★ 117 cited

Observation of inhomogeneous domain nucleation in epitaxial Pb(Zr,Ti)O3 capacitors

D. J. Kim, J. Y. Jo, T. H. Kim +4

We investigated domain nucleation process in epitaxial Pb(Zr,Ti)O3 capacitors under a modified piezoresponse force microscope. We obtained domain evolution images during polarizati…

cond-mat.mtrl-sci2005★ 65 cited

Ferroelectric properties of SrRuO3/BaTiO3/SrRuO3 ultrathin film capacitors free from passive lay

Y. S. Kim, J. Y. Jo, D. J. Kim +9

Structural studies on ultrathin SrRuO3/BaTiO3/SrRuO3 capacitors, with BaTiO3 thicknesses of between 5 nm and 30 nm, show well-defined interfaces between ferroelectric BaTiO3 and el…