Indirect electric field doping of the CuO2 planes of the cuprate NdBa2Cu3O7 superconductor

Abstract

The mechanism of field-effect doping in the "123" high critical temperature superconductors (HTS) has been investigated by x-ray absorption spectroscopy in the presence of an electric field. We demonstrate that holes are created at the CuO chains of the charge reservoir and that field-effect doping of the CuO2 planes occurs by charge transfer, from the chains to the planes, of a fraction of the overall induced holes. The electronic properties of the charge reservoir and of the dielectric/HTS interface determine the electric field doping of the CuO2 planes

arXiv comment4 pages, 4 figures, Phys. Rev. Lett. accepted January (2008)

References in corpus (4)

• Carrier concentrations in Bi_{2}Sr_{2-z}La_{z}CuO_{6+δ} single crystals and their relation to Hall coefficient and thermopower
• Electrostatic Tuning of the Superconductor-Insulator Transition in Two Dimensions
• Electric field effect modulation of transition temperature, mobile carrier density and in-plane penetration depth in NdBa2Cu3O(7-delta) thin films
• Doping Controlled Superconductor-Insulator Transition in Bi2Sr2-xLaxCaCu2O8+delta

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