Effect of crystallographic anisotropy on the resistance switching phenomenon in perovskites

Abstract

Resistance switching effects in metal/perovskite contacts based on epitaxial c-axis oriented Y-Ba-Cu-O (YBCO) thin films with different crystallographic orientations have been studied. Three types of Ag/YBCO junctions with the contact restricted to (i) c-axis direction, (ii) ab-plane direction, and (iii) both were designed and fabricated, and their current-voltage characteristics have been measured. The type (i) junctions exhibited conventional bipolar resistance switching behavior, whereas in other two types the low-resistance state was unsteady and their resistance quickly relaxed to the initial high-resistance state. Physical mechanism based on the oxygen diffusion scenario, explaining such behavior, is discussed.

The final version was published in Journal of Applied Physics (2012)

References in corpus (4)

• Indirect electric field doping of the CuO2 planes of the cuprate NdBa2Cu3O7 superconductor
• Non-volatile resistive switching in dielectric superconductor YBCO
• Temperature dependence of the resistance switching effect studied on the metal/YBa2Cu3O6+x planar junctions
• Reversible transitions in high-$T_c$ cuprates based point contacts

Cited by in corpus (4)

• Proton irradiation effects on metal-YBCO interfaces
• Electrical conduction mechanisms of metal / high-Tc superconductor (YBCO) interfaces
• YBCO-based non-volatile ReRAM tested in Low Earth Orbit
• Electric transport as a probe to unveil microscopic aspects of oxygen-depleted YBCO