Studies of resistance switching effects in metal/YBa2Cu3O7-x interface junctions

Abstract

Current-voltage characteristics of planar junctions formed by an epitaxial c-axis oriented YBa2Cu3O7-x thin film micro-bridge and Ag counter-electrode were measured in the temperature range from 4.2 K to 300 K. A hysteretic behavior related to switching of the junction resistance from a high-resistive to a low-resistive state and vice-versa was observed and analyzed in terms of the maximal current bias and temperature dependence. The same effects were observed on a sub-micrometer scale YBa2Cu3O7-x thin film - PtIr point contact junctions using Scanning Tunneling Microscope. These phenomena are discussed within a diffusion model, describing an oxygen vacancy drift in YBa2Cu3O7-x films in the nano-scale vicinity of the junction interface under applied electrical fields.

To be published in Applied Surface Science.

References in corpus (2)

• Non-volatile resistive switching in dielectric superconductor YBCO
• Modifying the surface electronic properties of YBa2Cu3O7-delta with cryogenic scanning probe microscopy

Cited by in corpus (8)

• Intrinsically shunted Josephson junctions for electronics applications
• Effect of crystallographic anisotropy on the resistance switching phenomenon in perovskites
• Cyclic electric field stress on bipolar resistive switching devices
• Temperature dependence of the resistance switching effect studied on the metal/YBa2Cu3O6+x planar junctions
• Studies of YBa2Cu3O6+x degradation and surface conductivity properties by Scanning Spreading Resistance Microscopy
• Proton irradiation effects on metal-YBCO interfaces
• Electrical conduction mechanisms of metal / high-Tc superconductor (YBCO) interfaces
• Electric transport as a probe to unveil microscopic aspects of oxygen-depleted YBCO