Effect of edge roughness in graphene nanoribbon transistors

Abstract

The effects of edge irregularity and mixed edge shapes on the characteristics of graphene nanoribbon transistors are examined by self-consistent atomistic simulations based on the non-equilibrium Green's function formalism. The minimal leakage current increases due to the localized states induced in the band gap, and the on-current decreases due to smaller quantum transmission and the self-consistent electrostatic effect in general. Although the ratio between the on-current and minimal leakage current decreases, the transistor still switches even in the presence of edge roughness. The variation between devices, however, can be large, especially for a short channel length.

References in corpus (4)

• Electric Field Effect in Atomically Thin Carbon Films
• Energy Band Gap Engineering of Graphene Nanoribbons
• Energy Gaps in Graphene Nanoribbons
• Simulation of Graphene Nanoribbon Field Effect Transistors

Cited by in corpus (9)

• Tailoring the atomic structure of graphene nanoribbons by STM lithography
• Anisotropic Etching and Nanoribbon Formation in Single-Layer Graphene
• Etching and Narrowing of Graphene from the Edges
• Charge Transport in Disordered Graphene-Based Low Dimensional Materials
• Performance Comparison of Graphene Nanoribbon FETs with Schottky Contacts and Doped Reservoirs
• Effect of Edge Roughness on Electronic Transport in Graphene Nanoribbon Channel Metal Oxide Semiconductor Field-Effect Transistors
• Spontaneous edge-defect formation and defect-induced conductance suppression in graphene nanoribbons
• Variability Effects in Graphene: Challenges and Opportunities for Device Engineering and Applications
• Comparison of Raman spectra and vibrational density of states between graphene nanoribbons with different edges