947 citations
- Johannes Gutenberg University MainzDE28 papers
- Centre National de la Recherche ScientifiqueFR14 papers
- University of Applied Sciences MainzDE8 papers
- AGH University of KrakowPL7 papers
- Bielefeld UniversityDE6 papers
- Commissariat à l'Énergie Atomique et aux Énergies AlternativesFR6 papers
- Norwegian University of Science and TechnologyNO6 papers
- Physikalisch-Technische BundesanstaltDE6 papers
- Tohoku UniversityJP6 papers
- CEA GrenobleFR5 papers
- Forschungszentrum JülichDE5 papers
- Max Planck Institute for Intelligent SystemsDE5 papers
5 papers · 1 filter
Generation of imprinted strain gradients for spintronics
Giovanni Masciocchi, Mouad Fattouhi, Elizaveta Spetzler +7
In this work, we propose and evaluate an inexpensive and CMOS-compatible method to locally apply strain on a Si/SiOx substrate. Due to high growth temperatures and different therma…
Strain-controlled Domain Wall injection into nanowires for sensor applications
Giovanni Masciocchi, Mouad Fattouhi, Andreas Kehlberger +3
We investigate experimentally the effects of externally applied strain on the injection of 180 domain walls (DW) from a nucleation pad into magnetic nanowires, as typically…
Multiple magneto-ionic regimes in Ta/CoFeB/HfO
R. Pachat, D. Ourdani, J. W. van der Jagt +11
In Ta/CoFeB/HfO2 stacks a gate voltage drives, in a nonvolatile way, the system from an underoxidized state exhibiting in-plane anisotropy (IPA) to an optimum oxidation level resul…
Multi-bit MRAM storage cells utilizing serially connected perpendicular magnetic tunnel junctions
Piotr Rzeszut, Witold Skowroński, Sławomir Ziętek +2
Serial connection of multiple memory cells using perpendicular magnetic tunnel junctions (pMTJ) is proposed as a way to increase magnetic random access memory (MRAM) storage densit…
Current-induced magnetization switching in atom-thick tungsten engineered perpendicular magnetic tunnel junctions with large tunnel magnetoresistance
Mengxing Wang, Wenlong Cai, Kaihua Cao +11
Perpendicular magnetic tunnel junctions based on MgO/CoFeB structures are of particular interest for magnetic random-access memories because of their excellent thermal stability, s…