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- High Energy Accelerator Research OrganizationJP24 papers
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6 papers · 1 filter
A complete Raman mapping of phase transitions in Si under indentation
C. R. Das, H. C. Hsu, S. Dhara +7
Crystalline Si substrates are studied for pressure induced phase transformation under indentation at room temperature using Berkovich tip. Raman scattering study is used for the id…
Recrystallization of epitaxial GaN under indentation
S. Dhara, C. R. Das, H. C. Hsu +6
We report recrystallization of epitaxial (epi-) GaN(0001) film under indentation.Hardness value is measured close to 10 GPa, using a Berkovich indenter. Pop-in burst in the loading…
Multi-phonon Raman scattering in GaN nanowires
S. Dhara, Sharat Chandra, G. Mangamma +9
UV Raman scattering studies show longitudinal optical (LO) mode up to 4th order in wurtzite GaN nanowire system. Frohlich interaction of electron with the long range electrostatic…
Nitrogen ion beam synthesis of InN in InP (100) at elevated temperature
S. Dhara, P. Magudapathy, R. Kesavamoorthy +8
InN phase is grown in crystalline InP(100) substrates by 50 keV N+ implantation at an elevated temperature of 400 deg C followed by annealing at 525 deg C in N2 ambient. Crystallog…
Ferromagnetism in cobalt doped n-GaN
S. Dhara, B. Sundaravel, K. G. M. Nair +5
Ferromagnetic ordering is reported in the post-annealed samples of Co doped n-GaN formed by Co+ implantation. A maximum Curie temperature ~ 250K is recorded for the sample with 8 a…
Optical characterization of GaN by N+ implantation into GaAs at elevated temperature
S. Dhara, P. Magudapathy, R. Kesavamoorthy +7
Both hexagonal wurtzite and cubic zinc blend GaN phases were synthesized in GaAs by 50 keV N+ implantation at 400 deg C and subsequent annealing at 900 deg C for 15 min in N2 ambie…