Showing 2011 · cond-mat.mtrl-sciShow all

10 papers · 2 filters

cond-mat.mtrl-sci2011★ 122 cited

Thermal Expansion Coefficients of BiSe and SbTe Crystals from 10 K to 270 K

X. Chen, H. D. Zhou, A. Kiswandhi +7

Lattice constant of BiSe and SbTe crystals is determined by X-ray powder diffraction measurement in a wide temperature range. Linear thermal expansion coefficients…

cond-mat.mtrl-sci2011★ 416 cited

MoS2 Dual-Gate MOSFET with Atomic-Layer-Deposited Al2O3 as Top-Gate Dielectric

Han Liu, Peide D. Ye

We demonstrate atomic-layer-deposited (ALD) high-k dielectric integration on two-dimensional (2D) layer-structured molybdenum disulfide (MoS2) crystals and MoS2 dual-gate n-channel…

cond-mat.mtrl-sci2011★ 95 cited

Temperature dependence of Raman-active optical phonons in Bi_2Se_3 and Sb_2Te_3

Y. Kim, X. Chen, Z. Wang +8

Inelastic light scattering spectra of Bi_2Se_3 and Sb_2Te_3 single crystals have been measured over the temperature range from 5 K to 300 K. The temperature dependence of dominant…

cond-mat.mtrl-sci2011★ 19 cited

Effects of Interface Disorder on Valley Splitting in SiGe/Si/SiGe Quantum Wells

Zhengping Jiang, Neerav Kharche, Timothy Boykin +1

A sharp potential barrier at the Si/SiGe interface introduces valley splitting (VS), which lifts the 2-fold valley degeneracy in strained SiGe/Si/SiGe quantum wells (QWs). This wor…

cond-mat.mtrl-sci2011★ 1 cited

Thermoelectric Spin-Transfer Torque MRAM with Sub-Nanosecond Bi-Directional Writing using Magnonic Current

Niladri N. Mojumder, Kaushik Roy, David W. Abraham

A new genre of Spin-Transfer Torque (STT) MRAM is proposed, in which bi-directional writing is achieved using thermoelectrically controlled magnonic current as an alternative to co…

cond-mat.mtrl-sci2011★ 39 cited

Atomic-Layer-Deposited Al2O3 on Bi2Te3 for Topological Insulator Field-Effect Transistors

Han Liu, Peide D. Ye

We report dual-gate modulation of topological insulator field-effect transistors (TI FETs) made on Bi2Te3 thin flakes with integration of atomic-layer-deposited (ALD) Al2O3 high-k…

cond-mat.mtrl-sci2011★ 48 cited

Experimental and Atomistic Theoretical Study of Degree of Polarization from Multi-layer InAs/GaAs Quantum Dots

Muhammad Usman, Tomoya Inoue, Yukihiro Harda +2

Recent experimental measurements, without any theoretical guidance, showed that isotropic polarization response can be achieved by increasing the number of QD layers in a QD stack.…

cond-mat.mtrl-sci2011★ 22 cited

Magnonic spin-transfer torque MRAM with low power, high speed, and error-free switching

Niladri N. Mojumder, David W. Abraham, Kaushik Roy +1

A new class of spin-transfer torque magnetic random access memory (STT-MRAM) is discussed, in which writing is achieved using thermally initiated magnonic current pulses as an alte…

cond-mat.mtrl-sci2011★ 17 cited

Amorphous interface layer in thin graphite films grown on the carbon face of SiC

R. Colby, M. L. Bolen, M. A. Capano +1

Cross-sectional transmission electron microscopy (TEM) is used to characterize an amorphous layer observed at the interface in graphite and graphene films grown via thermal decompo…

cond-mat.mtrl-sci2011★ 61 cited

On the Best Bandstructure for Thermoelectric Performance

Changwook Jeong, Raseong Kim, Mark Lundstrom

The conventional understanding that a bandstructure that produces a Dirac delta function transport distribution (or transmission in the Landauer framework) maximizes the thermoelec…