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407 papers · 1 filter
Thermal Expansion Coefficients of BiSe and SbTe Crystals from 10 K to 270 K
X. Chen, H. D. Zhou, A. Kiswandhi +7
Lattice constant of BiSe and SbTe crystals is determined by X-ray powder diffraction measurement in a wide temperature range. Linear thermal expansion coefficients…
An additional study of multi-muon events produced in {\boldmath } collisions at {\boldmath } TeV
CDF Collaboration
We present one additional study of multi-muon events produced at the Fermilab Tevatron collider and recorded by the CDF II detector. We use a data set acquired with a dedicated dim…
Quantum-Hall plateau-plateau transition in top-gated epitaxial graphene grown on SiC (0001)
Tian Shen, Adam T. Neal, Michael L. Bolen +4
We investigate the low-temperature magneto-transport properties of monolayer epitaxial graphene films formed on the Si-face of semi-insulating 4H-SiC substrates by a high temperatu…
VERITAS Observations of day-scale flaring of M87 in 2010 April
E. Aliu, T. Arlen, T. Aune +88
VERITAS has been monitoring the very-high-energy (VHE; >100GeV) gamma-ray activity of the radio galaxy M87 since 2007. During 2008, flaring activity on a timescale of a few days wa…
MoS2 Dual-Gate MOSFET with Atomic-Layer-Deposited Al2O3 as Top-Gate Dielectric
Han Liu, Peide D. Ye
We demonstrate atomic-layer-deposited (ALD) high-k dielectric integration on two-dimensional (2D) layer-structured molybdenum disulfide (MoS2) crystals and MoS2 dual-gate n-channel…
First Experimental Demonstration of Gate-all-around III-V MOSFET by Top-down Approach
Jiangjiang Gu, Yiqun Liu, Yanqing Wu +3
The first inversion-mode gate-all-around (GAA) III-V MOSFETs are experimentally demonstrated with a high mobility In0.53Ga0.47As channel and atomic-layer-deposited (ALD) Al2O3/WN g…