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20052026
most citedOptical nano-imaging of gate-tuneable graphene plasmons

2.1k citations

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cond-mat.mtrl-sci2020★ 78 cited

Origin of the Large Negative Electrocaloric Effect in Antiferroelectric PbZrO3

Pablo Vales-Castro, Romain Faye, Miquel Vellvehi +9

We have studied the electrocaloric response of the archetypal antiferroelectric PbZrO3 as a function of voltage and temperature in the vicinity of its antiferroelectric-paraelectri…

cond-mat.mtrl-sci2017★ 26 cited

Evidence of thermal transport anisotropy in stable glasses of vapour deposited organic molecules

Joan Ràfols-Ribé, Riccardo Dettori, Pablo Ferrando-Villalba +5

Vapour-deposited organic glasses are currently in use in many optoelectronic devices. Their operation temperature is limited by the glass transition temperature of the organic laye…

cond-mat.mtrl-sci2016★ 2 cited

How two-dimensional bending can extraordinarily stiffen thin sheets

V. Pini, J. J. Ruz, P. M. Kosaka +3

Curved thin sheets are ubiquitously found in nature and manmade structures. Within the framework of classical thin plate theory, the stiffness of thin sheets is independent of its…

cond-mat.mtrl-sci2012★ 2.1k cited

Optical nano-imaging of gate-tuneable graphene plasmons

Jianing Chen, Michela Badioli, Pablo Alonso-González +12

The ability to manipulate optical fields and the energy flow of light is central to modern information and communication technologies, as well as quantum information processing sch…

cond-mat.mtrl-sci2008★ 101 cited

Investigation of Long Monolayer Graphene Ribbons grown on Graphite Capped 6H-SiC (000-1)

N. Camara, G. Rius, J-R. Huntzinger +5

We present an investigation of large, isolated, graphene ribbons grown on the C-face of on-axis semi-insulating 6H-SiC wafers. Using a graphite cap to cover the SiC sample, we modi…

cond-mat.mtrl-sci2008★ 43 cited

Early stage formation of graphene on the C-face of 6H-SiC

N. Camara, G. Rius, J. -R. Huntzinger +5

An investigation of the early stage formation of graphene on the C-face of 6H-SiC is presented. We show that the sublimation of few atomic layers of Si out of the SiC substrate is…