Electron Mobility in Polarization-doped Al${}_{0-0.2}$GaN with a Low Concentration Near 10${}^{17}$ cm${}^{-3}$

Mingda Zhu, Meng Qi, Kazuki Nomoto +6

In this letter, carrier transport in graded Al${}_{\mathrm{x}}$Ga${}_{1-\mathrm{x}}$N with a polarization-induced n-type doping as low as ~ 10${}^{17}$ cm${}^{-3}$ is repor…