18.1k citations
Counting papers with at most 25 authors, so collaboration author lists do not stand in for the people here.
- The University of SydneyAU578 papers
- Australian National UniversityAU542 papers
- Commonwealth Scientific and Industrial Research OrganisationAU329 papers
- Centre National de la Recherche ScientifiqueFR319 papers
- Macquarie UniversityAU309 papers
- Data61AU268 papers
- University of CambridgeGB253 papers
- Australian Astronomical ObservatoryAU246 papers
- Centre for Quantum Computation and Communication TechnologyAU243 papers
- Australian Defence Force AcademyAU233 papers
- ARC Centre of Excellence for All-sky AstrophysicsAU232 papers
- Swinburne University of TechnologyAU209 papers
21 papers · 2 filters
Magnetotransport and induced superconductivity in Bi based three-dimensional topological insulators
M. Veldhorst, M. Snelder, M. Hoek +5
The surface of a 3D topological insulator is conducting and the topologically nontrivial nature of the surface states is observed in experiments. It is the aim of this paper to rev…
Anomalous spin precession and spin Hall effect in semiconductor quantum wells
Xintao Bi, Peiru He, E. M. Hankiewicz +3
Spin-orbit (SO) interactions give a spin-dependent correction r_so to the position operator, referred to as the anomalous position operator. We study the contributions of r_so to t…
Topological Proximity Effects in Graphene Nanoribbon Heterostructures
Gufeng Zhang, Xiaoguang Li, Guangfen Wu +4
Topological insulators (TI) are bulk insulators that possess robust chiral conducting states along their interfaces with normal insulators. A tremendous research effort has recentl…
The effect of (NH4)2Sx passivation on the (311)A GaAs surface and its use in AlGaAs/GaAs heterostructure devices
D. J. Carrad, A. M. Burke, P. J. Reece +6
We have studied the efficacy of (NH4)2Sx surface passivation on the (311)A GaAs surface. We report XPS studies of simultaneously-grown (311)A and (100) heterostructures showing tha…
A one-dimensional spin-orbit interferometer
T. Li, O. P. Sushkov
We demonstrate that the combination of an external magnetic field and the intrinsic spin-orbit interaction results in nonadiabatic precession of the electron spin after transmissio…
Topological Insulating States in Laterally Patterned Ordinary Semiconductors
O. P. Sushkov, A. H. Castro Neto
We propose that ordinary semiconductors with large spin-orbit coupling (SOC), such as GaAs, can host stable, robust, and {\it tunable} topological states in the presence of quantum…
Non-local coupling of two donor-bound electrons
J. Verduijn, R. R. Agundez, M. Blaauboer +1
We report the results of an experiment investigating coherence and correlation effects in a system of coupled donors. Two donors are strongly coupled to two leads in a parallel con…
Extreme sensitivity of the spin-splitting and 0.7 anomaly to confining potential in one-dimensional nanoelectronic devices
A. M. Burke, O. Klochan, I. Farrer +3
Quantum point contacts (QPCs) have shown promise as nanoscale spin-selective components for spintronic applications and are of fundamental interest in the study of electron many-bo…
Nanoscale broadband transmission lines for spin qubit control
J. P. Dehollain, J. J. Pla, E. Siew +3
The intense interest in spin-based quantum information processing has caused an increasing overlap between two traditionally distinct disciplines, such as magnetic resonance and na…
Architected Various MnO6 Octahedral Layers MnO2 Nanostructures
R. Zeng, J. Q. Wang, G. D. Du +4
A series of MnO2 unique nanostructures were synthesized by a facile hydrothermal method with microwave-assisted procedures. A novel nanostructure formation mechanism has been propo…
The origin of gate hysteresis in p-type Si-doped AlGaAs/GaAs heterostructures
A. M. Burke, D. Waddington, D. Carrad +9
Gate instability/hysteresis in modulation-doped p-type AlGaAs/GaAs heterostructures impedes the development of nanoscale hole devices, which are of interest for topics from quantum…
Silicon Quantum Electronics
Floris A. Zwanenburg, Andrew S. Dzurak, Andrea Morello +6
This review describes recent groundbreaking results in Si, Si/SiGe and dopant-based quantum dots, and it highlights the remarkable advances in Si-based quantum physics that have oc…
Broadband Purcell enhanced emission dynamics of quantum dots in linear photonic crystal waveguides
Arne Laucht, Thomas Günthner, Simon Pütz +8
The authors investigate the spontaneous emission dynamics of self-assembled InGaAs quantum dots embedded in GaAs photonic crystal waveguides. For an ensemble of dots coupled to gui…
Nonequilibrium mesoscopic transport: a genealogy
Mukunda P. Das, Frederick Green
Models of nonequilibrium quantum transport underpin all modern electronic devices, from the largest scales to the smallest. Past simplifications such as coarse graining and bulk se…
Is it the boundaries or disorder that dominates electron transport in semiconductor `billiards'?
A. P. Micolich, A. M. See, B. C. Scannell +6
Semiconductor billiards are often considered as ideal systems for studying dynamical chaos in the quantum mechanical limit. In the traditional picture, once the electron's mean fre…
Fabrication and characterisation of ambipolar devices on an undoped AlGaAs/GaAs heterostructure
J. C. H. Chen, D. Q. Wang, O. Klochan +7
We have fabricated AlGaAs/GaAs heterostructure devices in which the conduction channel can be populated with either electrons or holes simply by changing the polarity of a gate bia…
The Impact of Small-Angle Scattering on Ballistic Transport in Quantum Dots
A. M. See, I. Pilgrim, B. C. Scannell +10
Disorder increasingly affects performance as electronic devices are reduced in size. The ionized dopants used to populate a device with electrons are particularly problematic, lead…
Suppression of low-frequency noise in two-dimensional electron gas at degenerately doped Si:P δ-layers
Saquib Shamim, Suddhasatta Mahapatra, Craig Polley +2
We report low-frequency 1/f noise measurements of degenerately doped Si:P δ-layers at 4.2K. The noise was found to be over six orders of magnitude lower than that of bulk Si:P syst…
Few Electron Limit of n-type Metal Oxide Semiconductor Single Electron Transistors
Enrico Prati, Marco De Michielis, Matteo Belli +14
We report electronic transport on n-type silicon Single Electron Transistors (SETs) fabricated in Complementary Metal Oxide Semiconductor (CMOS) technology. The n-MOSSETs are built…
A Waveguide-Coupled On-Chip Single Photon Source
A. Laucht, S. Pütz, T. Günthner +8
We investigate single photon generation from individual self-assembled InGaAs quantum dots coupled to the guided optical mode of a GaAs photonic crystal waveguide. By performing co…
Realizing lateral wrap-gated nanowire FETs: Controlling gate length with chemistry rather than lithography
Kristian Storm, Gustav Nylund, Lars Samuelson +1
An important consideration in miniaturizing transistors is maximizing the coupling between the gate and the semiconductor channel. A nanowire with a coaxial metal gate provides opt…