264 citations
Counting papers with at most 25 authors, so collaboration author lists do not stand in for the people here.
- Institut polytechnique de GrenobleFR20 papers
- Centre National de la Recherche ScientifiqueFR14 papers
- Laboratoire des Matériaux et du Génie PhysiqueFR9 papers
- European Synchrotron Radiation FacilityFR6 papers
- Université Grenoble AlpesFR6 papers
- CEA GrenobleFR4 papers
- Centre de Radiofréquences, Optique et Micro-nanoélectronique des AlpesFR4 papers
- Commissariat à l'Énergie Atomique et aux Énergies AlternativesFR3 papers
- Institut de Chimie Moléculaire et des Matériaux d'OrsayFR3 papers
- Institut d'électronique de microélectronique et de nanotechnologieFR3 papers
- Institut de Microélectronique, Electromagnétisme et PhotoniqueFR3 papers
- Laboratoire Structures, Propriétés et Modélisation des SolidesFR3 papers
5 papers · 1 filter
Non-Arrhenius conduction due to the interface-trap-induced disorder in X-doped amorphous InXZnO thin-film transistors
Mohammed Benwadih, J. A. Chroboczek, Gerard Ghibaudo +2
Thin film transistors, with channels composed of In-X-Zn oxides, IXZO, with X dopants: Ga, Sb, Be, Mg, Ag, Ca, Al, Ni, and Cu, were fabricated and their I-V characteristics were ta…
Impact of dopant species on the interfacial trap density and mobility in amorphous In-X-Zn-O solution-processed thin-film transistors
Mohammed Benwadih, J. A. Chroboczek, Gerard Ghibaudo +2
Alloying of In/Zn oxides with various X atoms stabilizes the IXZO structures but generates electron traps in the compounds, degrading the electron mobility. To assess whether the l…
Spin-orbit coupling and phase-coherence in InAs nanowires
S. Estévez Hernández, M. Akabori, K. Sladek +7
We investigated the magnetotransport of InAs nanowires grown by selective area metal-organic vapor phase epitaxy. In the temperature range between 0.5 and 30 K reproducible fluctua…
Intrinsic and doped coupled quantum dots created by local modulation of implantation in a silicon nanowire
Mathieu Pierre, Benoît Roche, Romain Wacquez +3
We present a systematic study of various ways (top gates, local doping, substrate bias) to fabricate and tune multi-dot structures in silicon nanowire multigate MOSFETs (metal-oxid…
Imaging Electron Wave Functions Inside Open Quantum Rings
F. Martins, B. Hackens, M. G. Pala +8
Combining Scanning Gate Microscopy (SGM) experiments and simulations, we demonstrate low temperature imaging of electron probability density in embedded mesoscopic q…