264 citations
- Institut polytechnique de GrenobleFR20 papers
- Centre National de la Recherche ScientifiqueFR14 papers
- Laboratoire des Matériaux et du Génie PhysiqueFR9 papers
- European Synchrotron Radiation FacilityFR6 papers
- Université Grenoble AlpesFR6 papers
- CEA GrenobleFR4 papers
- Centre de Radiofréquences, Optique et Micro-nanoélectronique des AlpesFR4 papers
- Commissariat à l'Énergie Atomique et aux Énergies AlternativesFR3 papers
- Institut de Chimie Moléculaire et des Matériaux d'OrsayFR3 papers
- Institut d'électronique de microélectronique et de nanotechnologieFR3 papers
- Institut de Microélectronique, Electromagnétisme et PhotoniqueFR3 papers
- Laboratoire Structures, Propriétés et Modélisation des SolidesFR3 papers
21 papers
Optimization of Complex Process, Based on Design Of Experiments, a Generic Methodology
Julien Baderot, Yann Cauchepin, Alexandre Seiller +8
MicroLED displays are the result of a complex manufacturing chain. Each stage of this process, if optimized, contributes to achieving the highest levels of final efficiencies. Comm…
Emergent structures and dynamics of cell colonies by contact inhibition of locomotion
Bart Smeets, Ricard Alert, Jiri Pesek +3
Cells in tissues can organize into a broad spectrum of structures according to their function. Drastic changes of organization, such as epithelial-mesenchymal transitions or the fo…
X-ray absorption and emission spectroscopy study of Mn and Co valence and spin states in TbMnCoO
V. Cuartero, S. Lafuerza, M. Rovezzi +4
The valence and spin state evolution of Mn and Co on TbMnCoO series is precisely determined by means of soft and hard x-ray absorption spectroscopy (XAS)…
Non-Arrhenius conduction due to the interface-trap-induced disorder in X-doped amorphous InXZnO thin-film transistors
Mohammed Benwadih, J. A. Chroboczek, Gerard Ghibaudo +2
Thin film transistors, with channels composed of In-X-Zn oxides, IXZO, with X dopants: Ga, Sb, Be, Mg, Ag, Ca, Al, Ni, and Cu, were fabricated and their I-V characteristics were ta…
Impact of dopant species on the interfacial trap density and mobility in amorphous In-X-Zn-O solution-processed thin-film transistors
Mohammed Benwadih, J. A. Chroboczek, Gerard Ghibaudo +2
Alloying of In/Zn oxides with various X atoms stabilizes the IXZO structures but generates electron traps in the compounds, degrading the electron mobility. To assess whether the l…
Structural and insulator-to-metal phase transition at 50 GPa in GdMnO3
J. Agostinho Moreira, A. Almeida, J. Oliveira +6
We present a study of the effect of very high pressure on the orthorhombic perovskite GdMnO3 by Raman spectroscopy and synchrotron x-ray diffraction up to 53.2 GPa. The experimenta…