30 citations · 33 across the 4 of their papers we have counts for
4 papers
On the fluctuation-dissipation of the oxide trapped charge in a MOSFET operated down to deep cryogenic temperatures
Gerard Ghibaudo
An analysis of the oxide trapped charge noise in a MOSFET operated down to deep cryogenic temperatures is proposed. To this end, a revisited derivation of the interface trap conduc…
Non-Arrhenius conduction due to the interface-trap-induced disorder in X-doped amorphous InXZnO thin-film transistors
Mohammed Benwadih, J. A. Chroboczek, Gerard Ghibaudo +2
Thin film transistors, with channels composed of In-X-Zn oxides, IXZO, with X dopants: Ga, Sb, Be, Mg, Ag, Ca, Al, Ni, and Cu, were fabricated and their I-V characteristics were ta…
Impact of dopant species on the interfacial trap density and mobility in amorphous In-X-Zn-O solution-processed thin-film transistors
Mohammed Benwadih, J. A. Chroboczek, Gerard Ghibaudo +2
Alloying of In/Zn oxides with various X atoms stabilizes the IXZO structures but generates electron traps in the compounds, degrading the electron mobility. To assess whether the l…
Monte Carlo study of apparent mobility reduction in nano-MOSFETs
K. Huet, J. Saint-Martin, A. Bournel +4
The concept of mobility is discussed in the case of unstrained and strained nanoscale DG MOSFET thanks to particle Monte Carlo device simulation. Without the introduction of specif…