399 citations
- Helmholtz-Zentrum Dresden-RossendorfDE17 papers
- Technische Universität DresdenDE15 papers
- Fraunhofer Institute for Electronic Nano SystemsDE8 papers
- Coventry UniversityGB6 papers
- Friedrich Schiller University JenaDE6 papers
- Leibniz Institute for Solid State and Materials ResearchDE6 papers
- Max Planck Institute for the Physics of Complex SystemsDE6 papers
- Centre National de la Recherche ScientifiqueFR5 papers
- University of WarwickGB5 papers
- Charles UniversityCZ4 papers
- FZU ‒ Institute of Physics of the Academy of Sciences of the Czech RepublicCZ4 papers
- Leipzig UniversityDE4 papers
19 papers · 1 filter
Charge Photogeneration in Non-Fullerene Organic Solar Cells: Influence of Excess Energy and Electrostatic Interactions
Maria Saladina, Pablo Simón Marqués, Anastasia Markina +11
In organic solar cells, photogenerated singlet excitons form charge transfer (CT) complexes, which subsequently split into free charge carriers. Here, we consider the contributions…
Chlorine doping of MoSe2 flakes by ion implantation
Slawomir Prucnal, Arsalan Hashemi, Mahdi Ghorbani-Asl +10
The efficient integration of transition metal dichalcogenides (TMDs) into the current electronic device technology requires mastering the techniques of effective tuning of their op…
Silicon carbide stacking-order-induced doping variation in epitaxial graphene
Davood Momeni Pakdehi, Philip Schädlich, T. T. Nhung Nguyen +7
Generally, it is supposed that the Fermi level in epitaxial graphene is controlled by two effects: p-type polarization doping induced by the bulk of the hexagonal SiC(0001) substra…
Nonlinear losses in magnon transport due to four-magnon scattering
Tobias Hula, Katrin Schultheiss, Aleksandr Buzdakov +9
We report on the impact of nonlinear four-magnon scattering on magnon transport in microstructured Co25Fe75 waveguides with low magnetic damping. We determine the magnon propagatio…
Topological Hall effect in single thick SrRuO3 layers induced by defect engineering
Changan Wang, Ching-Hao Chang, Andreas Herklotz +11
The topological Hall effect (THE) has been discovered in ultrathin SrRuO3 (SRO) films, where the interface between the SRO layer and another oxide layer breaks the inversion symmet…
Ion-Irradiation-Induced Cobalt/Cobalt Oxide Heterostructures: Printing 3D Interfaces
Oğuz Yıldırım, Donovan Hilliard, Sri Sai Phani Kanth Arekapudi +10
Interfaces separating ferromagnetic (FM) layers from non-ferromagnetic layers offer unique properties due to spin-orbit coupling and symmetry breaking, yielding effects such as exc…