2.5k citations
Counting papers with at most 25 authors, so collaboration author lists do not stand in for the people here.
- ETH ZurichCH630 papers
- Paul Scherrer InstituteCH136 papers
- École Polytechnique Fédérale de LausanneCH61 papers
- University of ZurichCH45 papers
- University of RegensburgDE44 papers
- Institute of PhysicsPL39 papers
- Centre National de la Recherche ScientifiqueFR37 papers
- Swiss Light Source37 papers
- Polish Academy of SciencesPL36 papers
- P.L. Kapitza Institute for Physical ProblemsRU26 papers
- National Institute for Materials ScienceJP25 papers
- University of GenevaCH23 papers
20 papers · 2 filters
Optical detection of single electron transport dynamics
A. Kurzmann, P. Stegmann, J. Kerski +6
The unpredictability of a single quantum event lies at the very core of quantum mechanics. Physical information is therefore drawn from a statistical evaluation of many such proces…
Chiral Topological Semimetal with Multifold Band Crossings and Long Fermi arcs
Niels B. M. Schröter, Ding Pei, Maia G. Vergniory +14
Topological semimetals in crystals with a chiral structure (which possess a handedness due to a lack of mirror and inversion symmetries) are expected to display numerous exotic phy…
Direct observation of energy spectrum transition in narrow AlAs quantum wells
A. R. Khisameeva, A. V. Shchepetilnikov, V. M. Muravev +8
Spectra of magnetoplasma excitations have been investigated in a two-dimensional electron systems in AlAs quantum wells (QWs) of different widths. The magnetoplasma spectrum have b…
Tunneling spectroscopy of graphene nanodevices coupled to large-gap superconductors
Joel I-Jan Wang, Landry Bretheau, Daniel Rodan-Legrain +4
We performed tunneling spectroscopy measurements of graphene coupled to niobium/niobium-nitride superconducting electrodes. Due to the proximity effect, the graphene density of sta…
Phase Slips and Parity Jumps in Quantum Oscillations of Inverted InAs/GaSb Quantum Wells
Matija Karalic, Christopher Mittag, Susanne Mueller +5
We present magnetotransport measurements of a strongly hybridized inverted InAs/GaSb double quantum well. We find that the spin-orbit interaction leads to an appreciable spin-split…
Edgeless and Purely Gate-Defined Nanostructures in InAs Quantum Wells
Christopher Mittag, Matija Karalic, Zijin Lei +4
Nanostructures in InAs quantum wells have so far remained outside of the scope of traditional microfabrication techniques based on etching. This is due to parasitic parallel conduc…
Topologically non-trivial valley states in bilayer graphene quantum point contacts
Hiske Overweg, Angelika Knothe, Thomas Fabian +11
We present measurements of quantized conductance in electrostatically induced quantum point contacts in bilayer graphene. The application of a perpendicular magnetic field leads to…
Universal nuclear focusing of confined electron spins
Sergej Markmann, Christian Reichl, Werner Wegscheider +1
For spin-based quantum computation in semiconductors, dephasing of electron spins by a fluctuating background of nuclear spins is a main obstacle. Here we show that this nuclear ba…
Stable Branched Electron Flow
B A Braem, C Gold, S Hennel +6
The pattern of branched electron flow revealed by scanning gate microscopy shows the distribution of ballistic electron trajectories. The details of the pattern are determined by t…
Scanning Gate Microscopy in a Viscous Electron Fluid
Beat A Braem, Francesco M D Pellegrino, Alessandro Principi +10
We measure transport through a Ga[Al]As heterostructure at temperatures between 0.1 K and 30 K. Increasing the temperature enhances the electron-electron scattering rate and viscou…
Interactions and magnetotransport through spin-valley coupled Landau levels in monolayer MoS
Riccardo Pisoni, Andor Kormányos, Matthew Brooks +12
The strong spin-orbit coupling and the broken inversion symmetry in monolayer transition metal dichalcogenides (TMDs) results in spin-valley coupled band structures. Such a band st…
Gate-Defined Quantum Confinement in InSe-based van der Waals Heterostructures
Matthew Hamer, Endre Tóvári, Mengjian Zhu +13
Indium selenide, a post-transition metal chalcogenide, is a novel two-dimensional (2D) semiconductor with interesting electronic properties. Its tunable band gap and high electron…
Coupled quantum dots in bilayer graphene
Marius Eich, Riccardo Pisoni, Alessia Pally +8
Electrostatic confinement of charge carriers in bilayer graphene provides a unique platform for carbon-based spin, charge or exchange qubits. By exploiting the possibility to induc…
Strong interactions between dipolar polaritons
Emre Togan, Hyang-Tag Lim, Stefan Faelt +2
Nonperturbative coupling between cavity photons and excitons leads to formation of hybrid light-matter excitations termed polaritons. In structures where photon absorption leads to…
Effective g factor of 2D holes in strained Ge quantum wells
I. L. Drichko, A. A. Dmitriev, V. A. Malysh +5
The effective g-factor of 2D holes in modulation doped \mbox{p-SiGe/Ge/SiGe} structures was studied. The AC conductivity of samples with hole densities from ~to…
A parametric symmetry breaking transducer
A. Eichler, T. L. Heugel, A. Leuch +3
Force detectors rely on resonators to transduce forces into a readable signal. Usually these resonators operate in the linear regime and their signal appears amidst a competing bac…
Automated tuning of inter-dot tunnel couplings in quantum dot arrays
C. J. van Diepen, P. T. Eendebak, B. T. Buijtendorp +5
Semiconductor quantum dot arrays defined electrostatically in a 2D electron gas provide a scalable platform for quantum information processing and quantum simulations. For the oper…
Spin and Valley States in Gate-defined Bilayer Graphene Quantum Dots
Marius Eich, František Herman, Riccardo Pisoni +9
In bilayer graphene, electrostatic confinement can be realized by a suitable design of top and back gate electrodes. We measure electronic transport through a bilayer graphene quan…
A 2x2 quantum dot array with controllable inter-dot tunnel couplings
Uditendu Mukhopadhyay, Juan Pablo Dehollain, Christian Reichl +2
The interaction between electrons in arrays of electrostatically defined quantum dots is naturally described by a Fermi-Hubbard Hamiltonian. Moreover, the high degree of tunability…
Gate-Tunable Quantum Dot in a High Quality Single Layer MoS Van der Waals Heterostructure
Riccardo Pisoni, Zijin Lei, Patrick Back +7
We have fabricated an encapsulated monolayer MoS device with metallic ohmic contacts through a pre-patterned hBN layer. In the bulk, we observe an electron mobility…