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20162026
most citedThe charge transport mechanism and electron trap nature in thermal oxide on silicon

22 citations

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Counting papers with at most 25 authors, so collaboration author lists do not stand in for the people here.

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cond-mat.mes-hall2016★ 22 cited

The charge transport mechanism and electron trap nature in thermal oxide on silicon

Damir R. Islamov, Vladimir A. Gritsenko, Timofey V. Perevalov +2

The charge transport mechanism of electron via traps in amorphous SiO has been studied. Electron transport is limited by phonon-assisted tunneling between traps. Thermal and op…