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14 papers · 1 filter
Micrometer-scale ballistic transport in encapsulated graphene at room temperature
A. S. Mayorov, R. V. Gorbachev, S. V. Morozov +8
Devices made from graphene encapsulated in hexagonal boron-nitride exhibit pronounced negative bend resistance and an anomalous Hall effect, which are a direct consequence of room-…
Graphene under hydrostatic pressure
John E. Proctor, Eugene Gregoryanz, Konstantin S. Novoselov +3
In-situ high pressure Raman spectroscopy is used to study monolayer, bilayer and few-layer graphene samples supported on silicon in a diamond anvil cell to 3.5 GPa. The results sho…
Uniaxial Strain in Graphene by Raman Spectroscopy: G peak splitting, Gruneisen Parameters and Sample Orientation
T. M. G. Mohiuddin, A. Lombardo, R. R. Nair +10
Graphene is the two-dimensional building block for carbon allotropes of every other dimensionality. Since its experimental discovery, graphene continues to attract enormous interes…
Non-volatile switching in graphene field effect devices
T. J. Echtermeyer, M. C. Lemme, M. Baus +3
The absence of a band gap in graphene restricts its straight forward application as a channel material in field effect transistors. In this letter, we report on a new approach to e…
Raman Fingerprint of Charged Impurities in Graphene
C. Casiraghi, S. Pisana, K. S. Novoselov +2
We report strong variations in the Raman spectra for different single-layer graphene samples obtained by micromechanical cleavage, which reveals the presence of excess charges, eve…
Electrochemically Top Gated Graphene: Monitoring Dopants by Raman Scattering
A. Das, S. Pisana, S. Piscanec +8
We demonstrate electrochemical top gating of graphene by using a solid polymer electrolyte. This allows to reach much higher electron and hole doping than standard back gating. In-…