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Showing 2010 · cond-mat.mes-hallShow all
3 papers · 2 filters
cond-mat.mes-hall2010★ 171 cited
Proposal of a spin torque majority gate logic
Dmitri E. Nikonov, George I. Bourianoff, Tahir Ghani
A new spin based logic device is proposed. It is comprised of a common free ferromagnetic layer separated by a tunnel junction from three inputs and one output with separate fixed…
cond-mat.mes-hall2010★ 9 cited
Simulation of the Spin Field Effect Transistors: Effects of Tunneling and Spin Relaxation on its Performance
Yunfei Gao, Tony Low, Mark S. Lundstrom +1
A numerical simulation of spin-dependent quantum transport for a spin field effect transistor (spinFET) is implemented in a widely used simulator nanoMOS. This method includes the…
cond-mat.mes-hall2010★ 50 cited
Strategies and tolerances of spin transfer torque switching
Dmitri E. Nikonov, George I. Bourianoff, Graham Rowlands +1
Schemes of switching nanomagnetic memories via the effect of spin torque with various polarizations of injected electrons are studied. Simulations based on macrospin and micromagne…