Strategies and tolerances of spin transfer torque switching

Abstract

Schemes of switching nanomagnetic memories via the effect of spin torque with various polarizations of injected electrons are studied. Simulations based on macrospin and micromagnetic theories are performed and compared. We demonstrate that switching with perpendicularly polarized current by short pulses and free precession requires smaller time and energy than spin torque switching with collinear in plane spin polarization; it is also found to be superior to other kinds of memories. We study the tolerances of switching to the magnitude of current and pulse duration. An increased Gilbert damping is found to improve tolerances of perpendicular switching without increasing the threshold current, unlike in plane switching.

40 pages, 16 figures

References in corpus (4)

• Spin Transfer Torques
• Anomalous Bias Dependence of Spin Torque in Magnetic Tunnel Junctions
• Spin-Torque Driven Magnetization Dynamics: Micromagnetic Modelling
• Coherent control of nanomagnet dynamics via ultrafast spin torque pulses

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