Bipolar switching in an orthogonal spin transfer spin valve device

Abstract

We demonstrate current-induced bipolar switching in in-plane magnetized spin-valve devices that incorporate a perpendicularly magnetized spin polarizing layer. Further, hysteretic transitions into a state with intermediate resistance occur at high currents, again for both current polarities. These transitions are shown to be consistent with a macrospin model that considers a spin-polarized current that is tilted with respect to the free layer plane, due to the presence of spin-transfer torque from the polarizing layer. These unique switching characteristics, which have their origin in the noncollinear layer magnetizations, are of interest for magnetic random access memory and spin-torque oscillator devices.

References in corpus (5)

• Current-driven Magnetization Reversal and Spin Wave Excitations in Co/Cu/Co Pillars
• Strategies and tolerances of spin transfer torque switching
• Thermally-Assisted Spin-Transfer Torque Dynamics in Energy Space
• Spin Torque Oscillators with Thermal Noise: A Constant Energy Orbit Approach
• Bipolar switching in an orthogonal spin transfer spin valve device

Cited by in corpus (6)

• Beyond Moore's technologies: operation principles of a superconductor alternative
• Bipolar switching in an orthogonal spin transfer spin valve device
• Reliable spin-transfer torque driven precessional magnetization reversal with an adiabatically decaying pulse
• Large Fluctuations and Singular Behavior of Nonequilibrium Systems
• A reduced model for precessional switching of thin-film nanomagnets under the influence of spin-torque
• Modeling the computer memory based on the ferromagnet/superconductor multilayers