170 citations
Counting papers with at most 25 authors, so collaboration author lists do not stand in for the people here.
- Institute of PhysicsPL32 papers
- Petersburg Nuclear Physics InstituteRU17 papers
- University of South CarolinaUS15 papers
- Clark Atlanta UniversityUS14 papers
- Institute of Chemistry, Komi Science CenterRU12 papers
- Institute of MathematicsPL10 papers
- Russian Academy of SciencesRU9 papers
- University of WrocławPL9 papers
- Jan Kochanowski UniversityPL8 papers
- Kurchatov InstituteRU8 papers
- Opole University of TechnologyPL8 papers
- Frantsevich Institute for Problems in Materials ScienceUA7 papers
10 papers · 1 filter
Low-Power Control of Resistance Switching Transitions in First-Order Memristors
Valeriy A. Slipko, Alon Ascoli, Fernando Corinto +1
In many cases, the behavior of physical memristive devices can be relatively well captured by using a single internal state variable. This study investigates the low-power control…
Reduction of Joule Losses in Memristive Switching Using Optimal Control
Valeriy A. Slipko, Yuriy V. Pershin
This study investigates strategies for minimizing Joule losses in resistive random access memory (ReRAM) cells, which are also referred to as memristive devices. Typically, the str…
Analytic and SPICE modeling of stochastic ReRAM circuits
V. J. Dowling, V. A. Slipko, Y. V. Pershin
The modeling of conventional (deterministic) electronic circuits - ones consisting of transistors, resistors, capacitors, inductors, and other traditional electronic components - i…
Theory of heterogeneous circuits with stochastic memristive devices
V. A. Slipko, Y. V. Pershin
We introduce an approach based on the Chapman-Kolmogorov equation to model heterogeneous stochastic circuits, namely, the circuits combining binary or multi-state stochastic memris…
Modeling networks of probabilistic memristors in SPICE
V. J. Dowling, V. A. Slipko, Y. V. Pershin
Efficient simulation of probabilistic memristors and their networks requires novel modeling approaches. One major departure from the conventional memristor modeling is based on a m…
Probabilistic Memristive Networks: Application of a Master Equation to Networks of Binary ReRAM cells
V. J. Dowling, V. A. Slipko, Y. V. Pershin
The possibility of using non-deterministic circuit components has been gaining significant attention in recent years. The modeling and simulation of their circuits require novel ap…
Bifurcation analysis of a TaO memristor model
Y. V. Pershin, V. A. Slipko
This paper presents a study of bifurcation in the time-averaged dynamics of TaO memristors driven by narrow pulses of alternating polarities. The analysis, based on a physics-inspi…
Transient dynamics of pulse-driven memristors in the presence of a stable fixed point
V. A. Slipko, Y. V. Pershin
Some memristors are quite interesting from the point of view of dynamical systems. When driven by narrow pulses of alternating polarities, their dynamics has a stable fixed point,…
Importance of the window function choice for the predictive modelling of memristors
V. A. Slipko, Y. V. Pershin
Window functions are widely employed in memristor models to restrict the changes of the internal state variables to specified intervals. Here we show that the actual choice of wind…
Metastable Memristive Lines for Signal Transmission and Information Processing Applications
V. A. Slipko, Y. V. Pershin
Traditional studies of memristive devices have mainly focused on their applications in non-volatile information storage and information processing. Here, we demonstrate that the th…