Bifurcation analysis of a TaO memristor model

Abstract

This paper presents a study of bifurcation in the time-averaged dynamics of TaO memristors driven by narrow pulses of alternating polarities. The analysis, based on a physics-inspired model, focuses on the stable fixed points and on how these are affected by the pulse parameters. Our main finding is the identification of a driving regime when two stable fixed points exist simultaneously. To the best of our knowledge, such bistability is identified in a single memristor for the first time. This result can be readily tested experimentally, and is expected to be useful in future memristor circuit designs.

References in corpus (4)

• Memory effects in complex materials and nanoscale systems
• Complementary Resistive Switching in Tantalum Oxide-Based Resistive Memory Devices
• Dynamical attractors of memristors and their networks
• Transient dynamics of pulse-driven memristors in the presence of a stable fixed point

Cited by in corpus (5)

• Stochastic resonance in a metal-oxide memristive device
• High Frequency Response of Volatile Memristors
• Low-Power Control of Resistance Switching Transitions in First-Order Memristors
• Nonlinear dynamics and stability analysis of locally-active Mott memristors using a physics-based compact model
• Minimizing energy dissipation during programming of resistive switching memory devices using their dynamical attractor states