45 citations · 324 across the 24 of their papers we have counts for
24 papers
Minimizing energy dissipation during programming of resistive switching memory devices using their dynamical attractor states
Valeriy A. Slipko, Alon Ascoli, Fernando Corinto +1
Under certain conditions, applying a sequence of voltage pulses of alternating polarities across a resistive switching memory device induces a finite number of fixed-point attracto…
Low-Power Control of Resistance Switching Transitions in First-Order Memristors
Valeriy A. Slipko, Alon Ascoli, Fernando Corinto +1
In many cases, the behavior of physical memristive devices can be relatively well captured by using a single internal state variable. This study investigates the low-power control…
Reduction of Joule Losses in Memristive Switching Using Optimal Control
Valeriy A. Slipko, Yuriy V. Pershin
This study investigates strategies for minimizing Joule losses in resistive random access memory (ReRAM) cells, which are also referred to as memristive devices. Typically, the str…
A probabilistic model of resistance jumps in memristive devices
V. A. Slipko, Y. V. Pershin
Resistance switching memory cells such as electrochemical metallization cells and valence change mechanism cells have the potential to revolutionize information processing and stor…
Analytic and SPICE modeling of stochastic ReRAM circuits
V. J. Dowling, V. A. Slipko, Y. V. Pershin
The modeling of conventional (deterministic) electronic circuits - ones consisting of transistors, resistors, capacitors, inductors, and other traditional electronic components - i…
Theory of heterogeneous circuits with stochastic memristive devices
V. A. Slipko, Y. V. Pershin
We introduce an approach based on the Chapman-Kolmogorov equation to model heterogeneous stochastic circuits, namely, the circuits combining binary or multi-state stochastic memris…