Reduction of Joule Losses in Memristive Switching Using Optimal Control

Abstract

This study investigates strategies for minimizing Joule losses in resistive random access memory (ReRAM) cells, which are also referred to as memristive devices. Typically, the structure of ReRAM cells involves a nanoscale layer of resistance-switching material sandwiched between two metal electrodes. The basic question that we ask is what is the optimal driving protocol to switch a memristive device from one state to another. In the case of ideal memristors, in the most basic scenario, the optimal protocol is determined by solving a variational problem without constraints with the help of the Euler-Lagrange equation. In the case of memristive systems, for the same situation, the optimal protocol is found using the method of Lagrange multipliers. We demonstrate the advantages of our approaches through specific examples and compare our results with those of switching with constant voltage or current. Our findings suggest that voltage or current control can be used to reduce Joule losses in emerging memory devices.

References in corpus (9)

• Circuit elements with memory: memristors, memcapacitors and meminductors
• Memristive model of amoeba's learning
• An experimental proof that resistance-switching memories are not memristors
• A simple test for ideal memristors
• Probabilistic Memristive Networks: Application of a Master Equation to Networks of Binary ReRAM cells
• Probabilistic Resistive Switching Device modeling based on Markov Jump processes
• Modeling networks of probabilistic memristors in SPICE
• A probabilistic model of resistance jumps in memristive devices
• Holy memristor

Cited by in corpus (3)

• Low-Power Control of Resistance Switching Transitions in First-Order Memristors
• Low-power switching of memristors exhibiting fractional-order dynamics
• Minimizing energy dissipation during programming of resistive switching memory devices using their dynamical attractor states