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- Eindhoven University of TechnologyNL8 papers
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- Polytechnique MontréalCA3 papers
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- Beijing Academy of Quantum Information SciencesCN1 paper
- California NanoSystems InstituteUS1 paper
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- Centre de Nanosciences et de NanotechnologiesFR1 paper
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5 papers · 1 filter
Full characterization and modelling of graded interfaces in a high lattice-mismatch axial nanowire heterostructure
D. V. Beznasyuk, P. Stepanov, J. L. Rouvière +4
Controlling the strain level in nanowire heterostructures is critical for obtaining coherent interfaces of high crystalline quality and for the setting of functional properties suc…
Direct Bandgap Emission from Hexagonal Ge and SiGe Alloys
E. M. T. Fadaly, A. Dijkstra, J. R. Suckert +16
Silicon crystallized in the usual cubic (diamond) lattice structure has dominated the electronics industry for more than half a century. However, cubic silicon (Si), germanium (Ge)…
Extraction of Dzyaloshinksii-Moriya interaction from propagating spin waves validated
Juriaan Lucassen, Casper F. Schippers, Marcel A. Verheijen +8
The interfacial Dzyaloshinksii-Moriya interaction (iDMI) is of great interest in thin-film magnetism because of its ability to stabilize chiral spin textures. It can be quantified…
Kinetic Control of Morphology and Composition in Ge/GeSn Core/Shell Nanowires
Simone Assali, Roberto Bergamaschini, Emilio Scalise +8
The growth of Sn-rich group-IV semiconductors at the nanoscale provides new paths for understanding the fundamental properties of metastable GeSn alloys. Here, we demonstrate the e…
Strain engineering in Ge/GeSn core/shell nanowires
Simone Assali, Marco Albani, Roberto Bergamaschini +6
Strain engineering in Sn-rich group IV semiconductors is a key enabling factor to exploit the direct band gap at mid-infrared wavelengths. Here, we investigate the effect of strain…