56 citations · 56 across the 2 of their papers we have counts for
6 papers
In-plane selective area InSb-Al nanowire quantum networks
Roy L. M. Op het Veld, Di Xu, Vanessa Schaller +19
Strong spin-orbit semiconductor nanowires coupled to a superconductor are predicted to host Majorana zero modes. Exchange (braiding) operations of Majorana modes form the logical g…
Thermodynamic driving force in the formation of hexagonal-diamond Si and Ge nanowires
E. Scalise, A. Sarikov, L. Barbisan +4
The metastable hexagonal-diamond phase of Si and Ge (and of SiGe alloys) displays superior optical properties with respect to the cubic-diamond one. The latter is the most stable a…
Origin and nature of killer defects in 3C-SiC for power electronic applications by a multiscale atomistic approach
Emilio Scalise, Luca Barbisan, Andrey Sarikov +3
3C-SiC epitaxially grown on Si displays a large wealth of extended defects. In particular, single, double and triple stacking faults (SFs) are observed in several experiments to co…
Kinetic Control of Morphology and Composition in Ge/GeSn Core/Shell Nanowires
Simone Assali, Roberto Bergamaschini, Emilio Scalise +8
The growth of Sn-rich group-IV semiconductors at the nanoscale provides new paths for understanding the fundamental properties of metastable GeSn alloys. Here, we demonstrate the e…
Temperature-dependent stability of polytypes and stacking faults in SiC: reconciling theory and experiments
Emilio Scalise, Anna Marzegalli, Francesco Montalenti +1
The relative stability of SiC polytypes, changing with temperature, has been considered a paradox for about thirty years, due to discrepancies between theory and experiments. Based…
Disentangling nonradiative recombination processes in Ge micro-crystals on Si substrates
F. Pezzoli, A. Giorgioni, K. Gallacher +9
We address nonradiative recombination pathways by leveraging surface passivation and dislocation management in micron-scale arrays of Ge crystals grown on deeply patterned Si subst…