33 citations · 36 across the 4 of their papers we have counts for
5 papers
Plastic Relaxation without Dislocations in -GaO Heteroepitaxy: A Structural Peculiarity of GaO Polymorphs
I. Bertoni, A. Marzegalli, A. Ugolotti +3
-GaO grows as three-dimensional islands on mismatched c-plane sapphire, often on a thin -GaO wetting layer, and eventually forms a continuous film by island c…
Interface stability of beta-Ga2O3 (100) on oxidized Si- and C-terminated 3C-SiC (001) substrates: a first-principles investigation
Marica Licciardi, Aldo Ugolotti, Emilio Scalise +1
We provide a first-principles modeling of the beta-Ga2O3/3C-SiC interface that takes into account the reconstructions occurring at the 3C-SiC (001) surface by oxidation, aiming to…
Interface energies of Ga2O3 phases with the sapphire substrate and the phase-locked epitaxy of metastable structures explained
Ilaria Bertoni, Aldo Ugolotti, Emilio Scalise +2
Despite the extensive work carried out on the epitaxial growth of Ga2O3, a fundamental understanding of the nucleation of its different metastable phases is still lacking. Here we…
Formation of Micrometer-Sized Textured Hexagonal Silicon Crystals via Nanoindentation
Mouad Bikerouin, Anna Marzegalli, Davide Spirito +10
We present a comprehensive study on the formation of micrometer-sized, textured hexagonal diamond silicon (hd-Si) crystals via nanoindentation followed by annealing. Utilizing adva…
Strain engineering in Ge/GeSn core/shell nanowires
Simone Assali, Marco Albani, Roberto Bergamaschini +6
Strain engineering in Sn-rich group IV semiconductors is a key enabling factor to exploit the direct band gap at mid-infrared wavelengths. Here, we investigate the effect of strain…