390 citations · 436 across the 3 of their papers we have counts for
3 papers
Mid-infrared emission and absorption in strained and relaxed direct bandgap GeSn semiconductors
Simone Assali, Alain Dijkstra, Anis Attiaoui +3
By independently engineering strain and composition, this work demonstrates and investigates direct band gap emission in the mid-infrared range from GeSn layers grown on silicon. W…
Direct Bandgap Emission from Hexagonal Ge and SiGe Alloys
E. M. T. Fadaly, A. Dijkstra, J. R. Suckert +16
Silicon crystallized in the usual cubic (diamond) lattice structure has dominated the electronics industry for more than half a century. However, cubic silicon (Si), germanium (Ge)…
Kinetic Control of Morphology and Composition in Ge/GeSn Core/Shell Nanowires
Simone Assali, Roberto Bergamaschini, Emilio Scalise +8
The growth of Sn-rich group-IV semiconductors at the nanoscale provides new paths for understanding the fundamental properties of metastable GeSn alloys. Here, we demonstrate the e…